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Samsung 990 EVO 1 TB M.2 PCI Express 4.0 NVMe V-NAND TLC

Samsung

Exact part listing

Samsung 990 EVO 1 TB M.2 PCI Express 4.0 NVMe V-NAND TLC

Samsung 990 EVO. SSD capacity: 1 TB, SSD form factor: M.2, Read speed: 5000 MB/s, Write speed: 4200 MB/s, Component for: PC

MPN
MZ-V9E1T0BW
GTIN
8806095300276
Category
Storage
SKU
Samsung-MZ-V9E1T0BW

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Technical specifications

NVMe version
2.0
Security algorithms
256-bit AES
SSD capacity
1 GB
SSD form factor
M.2
Interface
PCI Express 4.0
NVMe
Yes
Memory type
V-NAND TLC
Component for
PC
Hardware encryption
Yes
M.2 SSD size
2280 (22 x 80 mm)
Read speed
5000 MB/s
Write speed
4200 MB/s
Random read (4KB)
680000 IOPS
Random write (4KB)
800000 IOPS
PCI Express interface data lanes
x4
DevSlp (device sleep) support
Yes
PCI Express CEM revision
4.0
S.M.A.R.T. support
Yes
TRIM support
Yes
Mean time between failures (MTBF)
1500000 h
TBW rating
600
Operating voltage
3.3 V
Power consumption (read)
4.9 W
Power consumption (write)
4.5 W
Power consumption (sleep)
0.005 W
Power consumption (idle)
0.06 W
Power consumption DevSlp (device sleep)
5 mW
Width
80 mm
Depth
2.38 mm
Height
22 mm
Weight
9 g
Package type
Box
Operating temperature (T-T)
0 - 70 °C
Storage temperature (T-T)
-40 - 85 °C
Operating relative humidity (H-H)
5 - 95 %
Storage relative humidity (H-H)
5 - 95 %
Non-operating vibration
20 G
Operating shock
1500 G
Non-operating shock
1500 G
Warranty period
5 year(s)

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