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Samsung MZ-V8P2T0BW internal solid state drive 2 TB M.2 PCI Express 4.0 NVMe V-NAND MLC

Samsung

Exact part listing

Samsung MZ-V8P2T0BW internal solid state drive 2 TB M.2 PCI Express 4.0 NVMe V-NAND MLC

Samsung MZ-V8P2T0BW. SSD capacity: 2 TB, SSD form factor: M.2, Read speed: 7000 MB/s, Write speed: 5100 MB/s, Component for: PC

MPN
MZ-V8P2T0BW
GTIN
Not supplied
Category
Storage
SKU
Samsung-MZ-V8P2T0BW

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Technical specifications

NVMe version
1.3c
Security algorithms
256-bit AES
SSD capacity
2 GB
SSD form factor
M.2
Interface
PCI Express 4.0
NVMe
Yes
Memory type
V-NAND MLC
Component for
PC
Hardware encryption
Yes
M.2 SSD size
2280 (22 x 80 mm)
Read speed
7000 MB/s
Write speed
5100 MB/s
Random read (4KB)
1000000 IOPS
Random write (4KB)
1000000 IOPS
Controller type
Samsung Elpis
PCI Express interface data lanes
x4
DevSlp (device sleep) support
Yes
S.M.A.R.T. support
Yes
TRIM support
Yes
Mean time between failures (MTBF)
1500000 h
Operating voltage
3.3 V
Power consumption (max)
7.2 W
Power consumption (average)
6.1 W
Power consumption (standby)
0.035 W
Power consumption (idle)
0.035 W
Width
80.2 mm
Depth
2.38 mm
Height
22.1 mm
Weight
9 g
Package type
Box
Operating temperature (T-T)
0 - 70 °C
Minimum operating temperature
0 °C
Maximum operating temperature
70 °C
Operating shock
1500 G
Harmonized System (HS) code
84717070

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